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phys_org 00030.txt

#Uniform nanowire arrays for science and manufacturing Defect-free nanowires with diameters in the range of 100 nanometers (nm) hold significant promise for numerous in demand applications including printable transistors for flexible electronics high-efficiency light-emitting diodes resonator-based mass sensors and integrated near-field optoelectronic tips for advanced scanning tip microscopy. That promise cannot be realized however unless the wires can be fabricated in large uniform arrays using methods compatible with high-volume manufacture. To date that has not been possible for arbitrary spacings in ultra-high vacuum growth. Now NIST's PML's Optoelectronic Manufacturing Group has achieved a breakthrough: Reproducible synthesis of gallium nitride nanowires with controlled size and location on silicon substrates. The result was achieved by improving selective wire-growth processes to produce one nanowire of controlled diameter per mask-grid opening over a range of diameters from 100 nm to 200 nm. Ordered arrays with a variety of spacings were fabricated. In the near term the research will be used to create a wafer-scale arrays of probes for devices that examine the surface and near-surface properties of materials to optimize nanowire LEDS and to produce nanowires with controlled diameter for a collaborative project involving printable transistors for millimeter-wave reconfigurable antennae e

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