| Germanium (6) |  |
The new TFET is made from two atomically-thin layers of semiconducting molybdenum sulfide crystal on top of a substrate of germanium.
International team of scientists constructs first germanium-tin semiconductor laser for silicon chips The transfer of data between multiple cores as well as between logic elements and memory cells is regarded as a bottleneck in the fast-developing computer technology.
In contrast semiconductors of main group IV--to which both silicon and germanium belong--can be integrated into the manufacturing process without any major difficulties.
That is why research groups all over the globe are intensively pursuing the objective of manipulating the material properties of germanium
The scientists at Julich's Peter Grunberg Institute have succeeded now for the first time in creating a real direct main group IV semiconductor laser by combining germanium and tin
That way we were able to demonstrate that the germanium-tin compound can amplify optical signals as well as generate laser light reports Dr. Hans Sigg from the Laboratory for Micro and Nanotechnology.
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