data storage

impactlab_2011 00375.txt

Achieving more streamline data storage in the future will require de-duplication specialists who can rid our data centers of needless copies

Memory Augmentation Therapists Entertainment is all about the great memories it creates. Creating a better grade of memories can dramatically change who we are

impactlab_2013 00015.txt

With the national obesity and diabetes epidemics of the 2010s a distant memory, fastfood chains are a thing of the past.

impactlab_2013 01356.txt

everything we do can be stored in memory, so you can learn about each animal, and modify your stimulus accordingly.

Going back to something you said earlier about animal memory #and this may be too speculative a question to answer

impactlab_2013 01404.txt

memory kits for those with Alzheimers; and activity kits and games for Activity Directors, including a Karaoke Machine.

impactlab_2014 00479.txt

Just as data storage and software development formed some of the Information Economy markets, things like sustainable energy and resource sharing are emerging as Purpose Economy markets.

impactlab_2014 00526.txt

Achieving more streamline data storage in the future will require de-duplication specialists who can rid our data centers of needless copies and frivolous clutter. 75.

This image will become a distant memory as automated machines, drones, and swarmbots enter the pictures.

Memory Augmentation Therapists Entertainment is all about the great memories it creates. Creating a better grade of memories can dramatically change who we are

ScienceDaily_2013 09745.txt

#Flash memory: Silicon oxide memories transcend a hurdlea Rice university laboratory pioneering memory devices that use cheap plentiful silicon oxide to store data has pushed them a step further with chips that show the technology's practicality.

The team led by Rice chemist James Tour has built a 1-kilobit rewritable silicon oxide device with diodes that eliminate data-corrupting crosstalk.

With gigabytes of flash memory becoming steadily cheaper a 1k nonvolatile memory unit has little practical use.

But as a proof of concept the chip shows it should be possible to surpass the limitations of flash memory in packing density energy consumption per bit

The circuits require only two terminals instead of three as in most memory chips. The crossbar memories built by the Rice lab are flexible resist heat

which would allow higher density information storage than conventional two-state memory systems. The devices dubbed one diode-one resistor (1d-1r) worked especially well

In a (1r) crossbar structure with just the memory material if we made 1024 cells only about 63 cells would work individually.

From the engineering side of this integrating diodes into a 1k memory array is no small feat Tour said.

ScienceDaily_2014 06021.txt

#Silicon oxide for better computer memory: Use of porous silicon oxide reduces forming voltage, improves manufacturabilityrice University's breakthrough silicon oxide technology for high-density next-generation computer memory is one step closer to mass production thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional

production methods. First discovered five years ago Rice's silicon oxide memories are a type of two-terminal resistive random-access memory (RRAM) technology.

This memory is superior to all other two-terminal unipolar resistive memories by almost every metric Tour said.

The basic concept behind resistive memory devices is the insertion of a dielectric material--one that won't normally conduct electricity--between two wires.

RRAM is under development worldwide and expected to supplant flash memory technology in the marketplace within a few years

For example manufacturers have announced plans for RRAM prototype chips that will be capable of storing about one terabyte of data on a device the size of a postage stamp--more than 50 times the data density of current flash memory technology.

and even used it for exotic new devices like transparent flexible memory chips. At the same time the researchers also conducted countless tests to compare the performance of silicon oxide memories with competing dielectric RRAM technologies.

and a performance standpoint for nonvolatile memory Tour said. It can be manufactured at room temperature has an extremely low forming voltage high on-off ratio low power consumption nine-bit capacity per cell exceptional switching speeds and excellent cycling endurance.

and multi-bit capacity--are extremely appealing to memory companies. This is a major accomplishment and we've already been approached by companies interested in licensing this new technology he said.

< Back - Next >