memories

Synopsis: 6. brain & neuro & cogno: Memories:

impactlab_2011 00375.txt

Memory Augmentation Therapists Entertainment is all about the great memories it creates. Creating a better grade of memories can dramatically change who we are

and pave the way for an entirely new class of humans. 44. Time Brokers Time Bank Traders Where do you go

Amnesia Surgeons Doctors who are skilled in removing bad memories or destructive behavior. 55. Executioners for Virus-Builders In the future, virus-builders who get caught will have a choice.

impactlab_2012 00528.txt

but several former employees who spoke for this article said they had fond memories of their jobs,

impactlab_2014 00526.txt

Memory Augmentation Therapists Entertainment is all about the great memories it creates. Creating a better grade of memories can dramatically change who we are

and pave the way for an entirely new class of humans. 154. Time Brokers Time Bank Traders Where do you go

Amnesia Surgeons Doctors who are skilled in removing bad memories or destructive behavior. 162. Geoengineers Weather Control Specialists We are moving past the age of meteorology

ScienceDaily_2013 09745.txt

Silicon oxide memories transcend a hurdlea Rice university laboratory pioneering memory devices that use cheap plentiful silicon oxide to store data has pushed them a step further with chips that show the technology's practicality.

The crossbar memories built by the Rice lab are flexible resist heat and radiation and show promise for stacking in three-dimensional arrays.

Rudimentary silicon memories made in the Tour lab are now aboard the International Space station where they are being tested for their ability to hold a pattern

It will be industry's job to scale this into commercial memories but this demonstration shows it can be done.

ScienceDaily_2014 06021.txt

First discovered five years ago Rice's silicon oxide memories are a type of two-terminal resistive random-access memory (RRAM) technology.

This memory is superior to all other two-terminal unipolar resistive memories by almost every metric Tour said.

At the same time the researchers also conducted countless tests to compare the performance of silicon oxide memories with competing dielectric RRAM technologies.

Wang said We also demonstrated that the porous silicon oxide material increased the endurance cycles more than 100 times as compared with previous nonporous silicon oxide memories.

Finally the porous silicon oxide material has a capacity of up to nine bits per cell that is highest number among oxide-based memories

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